A Simulation Booster for Nanoelectronics
by staff from High-Performance Computing News Analysis | insideHPC on (#4QT0B)
Researchers from ETH Zurich have developed a method that can simulate nanoelectronics devices and their properties realistically, quickly and efficiently. This offers a ray of hope for the industry and data centre operators alike, both of which are struggling with the (over)heating that comes with increasingly small and powerful transistors - and with the high resulting electricity costs for cooling.
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