Article 4QT0B A Simulation Booster for Nanoelectronics

A Simulation Booster for Nanoelectronics

by
staff
from High-Performance Computing News Analysis | insideHPC on (#4QT0B)
csm_Gordon_2019_2_74137ac765-150x150.jpg

Researchers from ETH Zurich have developed a method that can simulate nanoelectronics devices and their properties realistically, quickly and efficiently. This offers a ray of hope for the industry and data centre operators alike, both of which are struggling with the (over)heating that comes with increasingly small and powerful transistors - and with the high resulting electricity costs for cooling.

The post A Simulation Booster for Nanoelectronics appeared first on insideHPC.

External Content
Source RSS or Atom Feed
Feed Location http://insidehpc.com/feed/
Feed Title High-Performance Computing News Analysis | insideHPC
Feed Link https://insidehpc.com/
Reply 0 comments