Memory: CEA-Leti Demonstrates Embedded FeRAM Platform Compatible with 22nm FD-SOI Node
by staff from High-Performance Computing News Analysis | insideHPC on (#6SV93)
SAN FRANCISCO - Dec. 10, 2024 - CEA-Leti research engineers in France have demonstrated for the first time a scalable hafnia-zirconia-based ferroelectric capacitor platform integrated into the back-end-of-line (BEOL) at the 22nm FD-SOI technology node. Reported today at the IEDM 2024 conference, this represents an advance in ferroelectric memory technology, significantly advancing scalability for embedded [...]
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