Next-generation 3D DRAM approaches reality as scientists achieve 120-layer stack using advanced deposition techniques

Researchers at imec and Ghent University have stacked 120 ultra-thin layers of silicon and silicon-germanium, a key step toward 3D DRAM. Using advanced epitaxial techniques, they controlled atomic strain to create a nanoscale skyscraper" of memory, paving the way for denser, faster chips.