Article 70QEE Next-gen MRAM breakthrough can flip bits at SRAM-rivalling speeds with low power consumption — researchers claim true next-gen breakthrough using Tungsten layer

Next-gen MRAM breakthrough can flip bits at SRAM-rivalling speeds with low power consumption — researchers claim true next-gen breakthrough using Tungsten layer

by
from Latest from Tom's Hardware on (#70QEE)
Story ImageThe major challenge that hampered the development and adoption of SOT-MRAM is now in the rearview mirror.
External Content
Source RSS or Atom Feed
Feed Location https://www.tomshardware.com/feeds/all
Feed Title Latest from Tom's Hardware
Feed Link https://www.tomshardware.com/
Reply 0 comments