HBM undergoes major architectural shakeup as TSMC and GUC detail HBM4, HBM4E and C-HBM4E — 3nm base dies to enable 2.5x performance boost with speeds of up to 12.8GT/s by 2027

HBM is undergoing its first major architectural overhaul in a decade, as HBM4, HBM4E, and C-HBM4E will introduce a 2048-bit interface, logic-node base dies, and optional custom memory logic inside base dies, enabling up to a 2.5X performance leap between 2025 and 2027.