Intel details progress on fabbing 2D transistors a few atoms thick in standard high volume fab production environment — chipmaker outlines 300-mm fab compatible with integration of 2D transistor

Intel and imec demonstrate the first 300-mm, fab-compatible integration of contacts and gate stacks for 2D transistors, marking a critical step in turning long-studied 2D materials from lab experiments into a realistic future option for high-volume logic manufacturing.