Intel and Micron say their quad-level-cell NAND is ready to rip
by from Techreport on (#3QQ8C)
Intel and Micron jointly announced today that they've begun production and shipments of what they claim is the first quad-level-cell (QLC) NAND flash memory in the industry. With a 64-layer 3D structure, the chips achieve one terabit (125 gigabytes) of density per die. If that's not enough bits for you, the companies also claim that their third-generation 96-layer 3D NAND is in the works to allow for even higher density per die.
Most 3D NAND these days uses triple-level-cell (TLC) NAND and 3D fabrication techniques, so the storage of four bits of information per cell represents a substantial increase in per-cell capacity. ...