Article 4YYG9 Samsung Launches Flashbolt High Bandwidth 2E Memory

Samsung Launches Flashbolt High Bandwidth 2E Memory

by
Rich Brueckner
from High-Performance Computing News Analysis | insideHPC on (#4YYG9)
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Today Samsung Electronics launched 'Flashbolt,' its third-generation High Bandwidth Memory 2E (HBM2E). The new 16-gigabyte (GB) HBM2E is uniquely suited to maximize HPC systems and help system manufacturers to advance their supercomputers, AI-driven data analytics and state-of-the-art graphics systems in a timely manner. "With the introduction of the highest performing DRAM available today, we are taking a critical step to enhance our role as the leading innovator in the fast-growing premium memory market," said Cheol Choi, executive vice president of Memory Sales & Marketing at Samsung Electronics.

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