Chinese researchers hail breakthrough in DRAM-like cells, which could be used in embedded or 3D stacked memory — absence of manufacturing detail casts doubt on mass production

Chinese researchers have demonstrated a 4F^2 dual-gate 2T0C capacitor-less, DRAM-like memory cell with multi-bit storage, fast writes, and long retention. In theory, the technology could be used as embedded or stacked 3D memory, but questions remain about its manufacturability and commercial viability.