3D V-NAND chips grow to 48 layers with 256Gb per die
by from Techreport on (#H5SZ)
Hot on the heels of Toshiba's 48-layer BiCS flash, Samsung has introduced 48-layer 3D V-NAND flash of its own. These flash chips pack 256Gb (32GB) per die, using what Samsung calls "3-bit MLC"-or TLC to the rest of us. Samsung says the new chips will double the capacity of its SSD lineup, and it also expects the new chips to pave the way for multi-terabyte SSDs.
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