Article 3W0GY Breakthrough for topological spintronics memory up to 100 times better in many ways than STT-MRAM

Breakthrough for topological spintronics memory up to 100 times better in many ways than STT-MRAM

by
brian wang
from NextBigFuture.com on (#3W0GY)
Japanese researchers have made the world's best-performing pure spin current source made of bismuth-antimony (BiSb) alloys, which they report as the best candidate for the first industrial...

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