Unisantis Proposes Dynamic Flash Memory as a DRAM Alternative; Samsung Unveils CXL Memory Module

takyon writes:

Startup Unisantis Proposes DRAM Alternative

Singapore-based DRAM specialist Unisantis Electronics revealed at this week's (virtual) IEEE International Memory Workshop (IMW) advances in its work on dynamic flash memory (DFM) that it claims is a faster and denser technology than DRAM or other types of volatile memory.

[...] DFM is also a type of volatile memory, but since it does not rely on capacitors it has fewer leak paths, it has no connection between switching transistors and a capacitor. The result is a cell design with the potential for significant increases in transistor density and -because it not only offers block refresh, but as a Flash memory it offers block erase - DFM reduces the frequency and the overhead of the refresh cycle and is capable of delivering significant improvements in speed and power compared to DRAM.

Using TCAD simulation, researchers at Unisantis have proven that DFM has a substantial potential to increase density 4X compared to DRAM. The scaling of DRAM has almost stopped at 16Gb, according to recent IEEE ISSCC (International Solid-State Circuits Conference) papers.

Using a PCIe Slot to Install DRAM: New Samsung CXL.mem Expansion Module

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