An Optimized Structure of Memristive Device for Neuromorphic Computing Systems

upstart writes in with an IRC submission for SoyCow4275:

An optimized structure of memristive device for neuromorphic computing systems:

Lobachevsky University scientists have implemented a new variant of the metal-oxide memristive device, which holds promise for use in RRAM (resistive random access memory) and novel computing systems, including neuromorphic ones.

Variability (lack of reproducibility) of resistive switching parameters is the key challenge on the way to new applications of memristive devices. This variability of parameters in 'metal-oxide-metal' device structures is determined by the stochastic nature of the migration process of the oxygen ion and/or oxygen vacancies responsible for oxidation and reduction of conductive channels (filaments) near the metal/oxide interface. It is also compounded by the degradation of device parameters in case of uncontrolled oxygen exchange.

Traditional approaches to controlling the memristive effect include the use of special electrical field concentrators and the engineering of materials/interfaces in the memristive device structure, which typically require a more complex technological process for fabricating memristive devices.

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