Samsung Announces 36 Gbps GDDR7 Memory Standard, Aims for 3D NAND With 1000 Layers
takyon writes:
The new 36 Gbps GDDR7 standard offers 50% improved speeds over the current 24 Gbps GDDR6X one from Micron. Peak GDDR7 bandwidth could reach 1.7 TB/s with a 384-bit bus. Samsung also plans to release 32 Gb DDR5 chips this year, and envisions a future where 1000-layer V-NAND storage could be possible by 2030.
[...] Furthermore, the 8.5 Gbps LPDDR5X DRAM solutions for mobile phones and ultrabooks are also expected to see increased adoption throughout the coming year.
The latest graphics cards from Nvidia, AMD, and Intel use GDDR6 or GDDR6X memory.
24 Gb DDR5 chips have already been announced as a stopgap between 16 Gb and 32 Gb, enabling memory modules with unusual capacities, e.g. 48 GiB instead of 32 or 64.
The 3D NAND currently in use by the industry has around 176 to 232 layers, so reaching 1000 layers could lead to quintupled SSD capacities.
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