BREAKTHROUGH Graphene on Silicon Carbide Which Enable Small Amounts of UltraFast THz Chips
by Brian Wang from NextBigFuture.com on (#6JAS0)
Researchers claims to have developed a method for producing a layer of graphene on a silicon carbide (SiC) wafer to form a semiconductor with a band gap of 0.6 eV and with room temperature electron mobility 10-20 times larger than other 2D semiconductors. They used a quasi-equilibrium annealing method to produces high-quality semiconducting epigraphene (SEG) ...