Article 6PJBW New Transistor’s Superlative Properties Could Have Broad Electronics Applications

New Transistor’s Superlative Properties Could Have Broad Electronics Applications

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Arthur T Knackerbracket has processed the following story:

In 2021, a team led by MIT physicists reported creating a new ultrathin ferroelectric material, or one where positive and negative charges separate into different layers. At the time they noted the material's potential for applications in computer memory and much more. Now the same core team and colleagues - including two from the lab next door - have built a transistor with that material and shown that its properties are so useful that it could change the world of electronics.

Although the team's results are based on a single transistor in the lab, in several aspects its properties already meet or exceed industry standards" for the ferroelectric transistorsproduced today, says Pablo Jarillo-Herrero, the Cecil and Ida Green Professor of Physics, who led the work with professor of physics Raymond Ashoori. Both are also affiliated with the Materials Research Laboratory.

In my lab we primarily do fundamental physics. This is one of the first, and perhaps most dramatic, examples of how very basic science has led to something that could have a major impact on applications," Jarillo-Herrero says.

Says Ashoori, When I think of my whole career in physics, this is the work that I think 10 to 20 years from now could change the world."

Among the new transistor's superlative properties:

  • It can switch between positive and negative charges - essentially the ones and zeros of digital information - at very high speeds, on nanosecond time scales. (A nanosecond is a billionth of a second.)
  • It is extremely tough. After 100 billion switches it still worked with no signs of degradation.
  • The material behind the magic is only billionths of a meter thick, one of the thinnest of its kind in the world. That, in turn, could allow for much denser computer memory storage. It could also lead to much more energy-efficient transistors because the voltage required for switching scales with material thickness. (Ultrathin equals ultralow voltages.)

The work is reported in arecent issue of Science. The co-first authors of the paper are Kenji Yasuda, now an assistant professor at Cornell University, and Evan Zalys-Geller, now at Atom Computing. Additional authors are Xirui Wang, an MIT graduate student in physics; Daniel Bennett and Efthimios Kaxiras of Harvard University; Suraj S. Cheema, an assistant professor in MIT's Department of Electrical Engineering and Computer Science and an affiliate of the Research Laboratory of Electronics; and Kenji Watanabe and Takashi Taniguchi of the National Institute for Materials Science in Japan.

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